Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe(2) Field-Effect Transistors

We investigated the electrical and optoelectronic characteristics of ambipolar WSe(2) field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe(2) surface, which ensured highe...

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Detalles Bibliográficos
Autores principales: Seo, Junseok, Cho, Kyungjune, Lee, Woocheol, Shin, Jiwon, Kim, Jae-Keun, Kim, Jaeyoung, Pak, Jinsu, Lee, Takhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742682/
https://www.ncbi.nlm.nih.gov/pubmed/31515651
http://dx.doi.org/10.1186/s11671-019-3137-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742682/
https://www.ncbi.nlm.nih.gov/pubmed/31515651
http://dx.doi.org/10.1186/s11671-019-3137-1

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