High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to 7% was demonstrated. The crystallinity of the GeSn layer was investigated via high-resolution X-ray diffraction (HR-XRD) and the strain relaxation degree of the GeSn layer was evaluated to be approximately 50%...

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Detalles Bibliográficos
Autores principales: Yang, Jiayin, Hu, Huiyong, Miao, Yuanhao, Dong, Linpeng, Wang, Bin, Wang, Wei, Su, Han, Xuan, Rongxi, Zhang, Heming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747586/
https://www.ncbi.nlm.nih.gov/pubmed/31438614
http://dx.doi.org/10.3390/ma12172662

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747586/
https://www.ncbi.nlm.nih.gov/pubmed/31438614
http://dx.doi.org/10.3390/ma12172662

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