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Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and...

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Detalles Bibliográficos
Autores principales: Chen, Yung-I, Zheng, Yu-Zhe, Chang, Li-Chun, Liu, Yu-Heng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747595/
https://www.ncbi.nlm.nih.gov/pubmed/31438512
http://dx.doi.org/10.3390/ma12172658