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Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films
Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747595/ https://www.ncbi.nlm.nih.gov/pubmed/31438512 http://dx.doi.org/10.3390/ma12172658 |
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author | Chen, Yung-I Zheng, Yu-Zhe Chang, Li-Chun Liu, Yu-Heng |
author_facet | Chen, Yung-I Zheng, Yu-Zhe Chang, Li-Chun Liu, Yu-Heng |
author_sort | Chen, Yung-I |
collection | PubMed |
description | Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H(3)/E*(2) level of 0.21–0.39 GPa, and an elastic recovery of 62–72%. |
format | Online Article Text |
id | pubmed-6747595 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-67475952019-09-27 Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films Chen, Yung-I Zheng, Yu-Zhe Chang, Li-Chun Liu, Yu-Heng Materials (Basel) Article Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H(3)/E*(2) level of 0.21–0.39 GPa, and an elastic recovery of 62–72%. MDPI 2019-08-21 /pmc/articles/PMC6747595/ /pubmed/31438512 http://dx.doi.org/10.3390/ma12172658 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Chen, Yung-I Zheng, Yu-Zhe Chang, Li-Chun Liu, Yu-Heng Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title | Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title_full | Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title_fullStr | Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title_full_unstemmed | Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title_short | Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films |
title_sort | effect of bias voltage on mechanical properties of hipims/rfms cosputtered zr–si–n films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747595/ https://www.ncbi.nlm.nih.gov/pubmed/31438512 http://dx.doi.org/10.3390/ma12172658 |
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