Impact of Gamma Radiation on Dynamic R(DSON) Characteristics in AlGaN/GaN Power HEMTs

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its...

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Detalles Bibliográficos
Autores principales: Martínez, Pedro J., Maset, Enrique, Martín-Holgado, Pedro, Morilla, Yolanda, Gilabert, David, Sanchis-Kilders, Esteban
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747841/
https://www.ncbi.nlm.nih.gov/pubmed/31466249
http://dx.doi.org/10.3390/ma12172760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747841/
https://www.ncbi.nlm.nih.gov/pubmed/31466249
http://dx.doi.org/10.3390/ma12172760

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