Cargando…
Impact of Gamma Radiation on Dynamic R(DSON) Characteristics in AlGaN/GaN Power HEMTs
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its...
Autores principales: | Martínez, Pedro J., Maset, Enrique, Martín-Holgado, Pedro, Morilla, Yolanda, Gilabert, David, Sanchis-Kilders, Esteban |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747841/ https://www.ncbi.nlm.nih.gov/pubmed/31466249 http://dx.doi.org/10.3390/ma12172760 |
Ejemplares similares
-
Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017) -
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014) -
Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022) -
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023) -
Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)