Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-pow...

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Detalles Bibliográficos
Autores principales: Chuang, Chiashain, Liu, Chieh-Wen, Yang, Yanfei, Syong, Wei-Ren, Liang, Chi-Te, Elmquist, Randolph E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747865/
https://www.ncbi.nlm.nih.gov/pubmed/31450728
http://dx.doi.org/10.3390/ma12172696

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6747865/
https://www.ncbi.nlm.nih.gov/pubmed/31450728
http://dx.doi.org/10.3390/ma12172696

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