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Mesostructured HfO(2)/Al(2)O(3) Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices

[Image: see text] Mesoporous hafnium dioxide (HfO(2)) thin films (around 20 nm thick) were fabricated by a sol–gel-based spin-coating process, followed by an annealing process at 600 °C to realize the ion-conducting media for the ionics (e.g., Na(+) and K(+) for rechargeable ion batteries). Another...

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Detalles Bibliográficos
Autores principales: Zakaria, Mohamed Barakat, Nagata, Takahiro, Chikyow, Toyohiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6751548/
https://www.ncbi.nlm.nih.gov/pubmed/31552307
http://dx.doi.org/10.1021/acsomega.9b01095