Nanomachining-enabled strain manipulation of magnetic anisotropy in the free-standing GaMnAs nanostructures

Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a...

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Detalles Bibliográficos
Autores principales: Yang, Chanuk, Lee, Jae-Hyun, Jo, Myunglae, Choi, Hyung Kook, Park, Seondo, Kim, Young Duck, Cho, Sung Un, Kim, Donguk, Park, Yun Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754389/
https://www.ncbi.nlm.nih.gov/pubmed/31541149
http://dx.doi.org/10.1038/s41598-019-50115-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754389/
https://www.ncbi.nlm.nih.gov/pubmed/31541149
http://dx.doi.org/10.1038/s41598-019-50115-1

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