Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a u...

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Detalles Bibliográficos
Autores principales: Bioud, Youcef A., Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique, Arès, Richard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754402/
https://www.ncbi.nlm.nih.gov/pubmed/31541107
http://dx.doi.org/10.1038/s41467-019-12353-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6754402/
https://www.ncbi.nlm.nih.gov/pubmed/31541107
http://dx.doi.org/10.1038/s41467-019-12353-9

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