Intensive measures of luminescence in GaN/InGaN heterostructures

The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons an...

Descripción completa

Detalles Bibliográficos
Autores principales: Hsiao, Jui-Ju, Huang, Yi-Jen, Chen, Hung-Ing, Jiang, Joe-Air, Wang, Jen-Cheng, Wu, Ya-Fen, Nee, Tzer-En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2019
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6759175/
https://www.ncbi.nlm.nih.gov/pubmed/31550270
http://dx.doi.org/10.1371/journal.pone.0222928

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6759175/
https://www.ncbi.nlm.nih.gov/pubmed/31550270
http://dx.doi.org/10.1371/journal.pone.0222928

Ejemplares similares