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Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
[Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e.,...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761620/ https://www.ncbi.nlm.nih.gov/pubmed/31572839 http://dx.doi.org/10.1021/acsomega.9b01394 |