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Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN

[Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e.,...

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Detalles Bibliográficos
Autores principales: Bao, Yitian, Xu, Shijie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761620/
https://www.ncbi.nlm.nih.gov/pubmed/31572839
http://dx.doi.org/10.1021/acsomega.9b01394
_version_ 1783454059385061376
author Bao, Yitian
Xu, Shijie
author_facet Bao, Yitian
Xu, Shijie
author_sort Bao, Yitian
collection PubMed
description [Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 10(4) V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values.
format Online
Article
Text
id pubmed-6761620
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-67616202019-09-30 Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN Bao, Yitian Xu, Shijie ACS Omega [Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 10(4) V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values. American Chemical Society 2019-09-10 /pmc/articles/PMC6761620/ /pubmed/31572839 http://dx.doi.org/10.1021/acsomega.9b01394 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Bao, Yitian
Xu, Shijie
Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title_full Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title_fullStr Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title_full_unstemmed Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title_short Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
title_sort dopant-induced electric fields and their influence on the band-edge absorption of gan
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761620/
https://www.ncbi.nlm.nih.gov/pubmed/31572839
http://dx.doi.org/10.1021/acsomega.9b01394
work_keys_str_mv AT baoyitian dopantinducedelectricfieldsandtheirinfluenceonthebandedgeabsorptionofgan
AT xushijie dopantinducedelectricfieldsandtheirinfluenceonthebandedgeabsorptionofgan