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Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN
[Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e.,...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761620/ https://www.ncbi.nlm.nih.gov/pubmed/31572839 http://dx.doi.org/10.1021/acsomega.9b01394 |
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author | Bao, Yitian Xu, Shijie |
author_facet | Bao, Yitian Xu, Shijie |
author_sort | Bao, Yitian |
collection | PubMed |
description | [Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 10(4) V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values. |
format | Online Article Text |
id | pubmed-6761620 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-67616202019-09-30 Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN Bao, Yitian Xu, Shijie ACS Omega [Image: see text] Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 10(4) V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values. American Chemical Society 2019-09-10 /pmc/articles/PMC6761620/ /pubmed/31572839 http://dx.doi.org/10.1021/acsomega.9b01394 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Bao, Yitian Xu, Shijie Dopant-Induced Electric Fields and Their Influence on the Band-Edge Absorption of GaN |
title | Dopant-Induced Electric Fields and Their Influence
on the Band-Edge Absorption of GaN |
title_full | Dopant-Induced Electric Fields and Their Influence
on the Band-Edge Absorption of GaN |
title_fullStr | Dopant-Induced Electric Fields and Their Influence
on the Band-Edge Absorption of GaN |
title_full_unstemmed | Dopant-Induced Electric Fields and Their Influence
on the Band-Edge Absorption of GaN |
title_short | Dopant-Induced Electric Fields and Their Influence
on the Band-Edge Absorption of GaN |
title_sort | dopant-induced electric fields and their influence
on the band-edge absorption of gan |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6761620/ https://www.ncbi.nlm.nih.gov/pubmed/31572839 http://dx.doi.org/10.1021/acsomega.9b01394 |
work_keys_str_mv | AT baoyitian dopantinducedelectricfieldsandtheirinfluenceonthebandedgeabsorptionofgan AT xushijie dopantinducedelectricfieldsandtheirinfluenceonthebandedgeabsorptionofgan |