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Highly durable and flexible gallium-based oxide conductive-bridging random access memory
The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga(2)O(3)/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10(5)), low operation voltage...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6775255/ https://www.ncbi.nlm.nih.gov/pubmed/31578400 http://dx.doi.org/10.1038/s41598-019-50816-7 |