Highly durable and flexible gallium-based oxide conductive-bridging random access memory

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga(2)O(3)/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10(5)), low operation voltage...

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Detalles Bibliográficos
Autores principales: Gan, Kai-Jhih, Liu, Po-Tsun, Chien, Ta-Chun, Ruan, Dun-Bao, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6775255/
https://www.ncbi.nlm.nih.gov/pubmed/31578400
http://dx.doi.org/10.1038/s41598-019-50816-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6775255/
https://www.ncbi.nlm.nih.gov/pubmed/31578400
http://dx.doi.org/10.1038/s41598-019-50816-7

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