Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrati...

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Detalles Bibliográficos
Autores principales: Hsu, Chih-Chieh, Liu, Po-Tsun, Gan, Kai-Jhih, Ruan, Dun-Bao, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8466751/
https://www.ncbi.nlm.nih.gov/pubmed/34578520
http://dx.doi.org/10.3390/nano11092204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8466751/
https://www.ncbi.nlm.nih.gov/pubmed/34578520
http://dx.doi.org/10.3390/nano11092204

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