A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication pr...

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Detalles Bibliográficos
Autores principales: Yang, Kun, Liu, Hongxia, Wang, Shulong, Li, Wei, Han, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780131/
https://www.ncbi.nlm.nih.gov/pubmed/31480685
http://dx.doi.org/10.3390/nano9091245

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780131/
https://www.ncbi.nlm.nih.gov/pubmed/31480685
http://dx.doi.org/10.3390/nano9091245

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