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A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication pr...

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Detalles Bibliográficos
Autores principales:	Yang, Kun, Liu, Hongxia, Wang, Shulong, Li, Wei, Han, Tao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780131/ https://www.ncbi.nlm.nih.gov/pubmed/31480685 http://dx.doi.org/10.3390/nano9091245

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