Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS(2)) is grown on the SiO(2)/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS(2) is system...

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Detalles Bibliográficos
Autores principales: Han, Tao, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Xie, Haiwu, Yang, Kun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780524/
https://www.ncbi.nlm.nih.gov/pubmed/31462000
http://dx.doi.org/10.3390/nano9091209

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780524/
https://www.ncbi.nlm.nih.gov/pubmed/31462000
http://dx.doi.org/10.3390/nano9091209

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