An Improved 4H-SiC MESFET with a Partially Low Doped Channel

An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a part...

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Detalles Bibliográficos
Autores principales: Jia, Hujun, Tong, Yibo, Li, Tao, Zhu, Shunwei, Liang, Yuan, Wang, Xingyu, Zeng, Tonghui, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780564/
https://www.ncbi.nlm.nih.gov/pubmed/31443584
http://dx.doi.org/10.3390/mi10090555

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780564/
https://www.ncbi.nlm.nih.gov/pubmed/31443584
http://dx.doi.org/10.3390/mi10090555

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