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A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias tempe...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780627/ https://www.ncbi.nlm.nih.gov/pubmed/31470623 http://dx.doi.org/10.3390/mi10090571 |
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author | Cui, Jian Yang, Haibing Li, Dong Song, Ziyang Zhao, Qiancheng |
author_facet | Cui, Jian Yang, Haibing Li, Dong Song, Ziyang Zhao, Qiancheng |
author_sort | Cui, Jian |
collection | PubMed |
description | Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias temperature drift of the custom-designed SRA. To solve this issue, this paper presents an SRA embedded in an isolation frame with stress insensitive anchor that prevents the resonant beams suffering from the thermal stress along the sense axis and thus improving the bias stability. Moreover, a high sensitivity device is achieved by integrating the vibrating beams with the comb fingers without conventional additional mass design. The experimental results show that the nominal resonant frequency of the SRA is around 93 kHz with the sensitivity and nonlinearity of 223.7 Hz/g and 5.1‰. The thermal sensitivities of the two resonant beams are −27.6 ppm/°C and −28.8 ppm/°C, respectively, which can be considered as the results owing to temperature change of the Young’s modulus without the thermal stress effect. The bias thermal sensitivity and the stability (1σ) after compensation are tested to be approximately 0.7 mg/°C and 1 mg over the temperature range from −40 °C to 60 °C with ±80 g measurement range. |
format | Online Article Text |
id | pubmed-6780627 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-67806272019-10-30 A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor Cui, Jian Yang, Haibing Li, Dong Song, Ziyang Zhao, Qiancheng Micromachines (Basel) Article Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias temperature drift of the custom-designed SRA. To solve this issue, this paper presents an SRA embedded in an isolation frame with stress insensitive anchor that prevents the resonant beams suffering from the thermal stress along the sense axis and thus improving the bias stability. Moreover, a high sensitivity device is achieved by integrating the vibrating beams with the comb fingers without conventional additional mass design. The experimental results show that the nominal resonant frequency of the SRA is around 93 kHz with the sensitivity and nonlinearity of 223.7 Hz/g and 5.1‰. The thermal sensitivities of the two resonant beams are −27.6 ppm/°C and −28.8 ppm/°C, respectively, which can be considered as the results owing to temperature change of the Young’s modulus without the thermal stress effect. The bias thermal sensitivity and the stability (1σ) after compensation are tested to be approximately 0.7 mg/°C and 1 mg over the temperature range from −40 °C to 60 °C with ±80 g measurement range. MDPI 2019-08-29 /pmc/articles/PMC6780627/ /pubmed/31470623 http://dx.doi.org/10.3390/mi10090571 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Cui, Jian Yang, Haibing Li, Dong Song, Ziyang Zhao, Qiancheng A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title | A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title_full | A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title_fullStr | A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title_full_unstemmed | A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title_short | A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor |
title_sort | silicon resonant accelerometer embedded in an isolation frame with stress relief anchor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780627/ https://www.ncbi.nlm.nih.gov/pubmed/31470623 http://dx.doi.org/10.3390/mi10090571 |
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