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A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor

Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias tempe...

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Autores principales: Cui, Jian, Yang, Haibing, Li, Dong, Song, Ziyang, Zhao, Qiancheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780627/
https://www.ncbi.nlm.nih.gov/pubmed/31470623
http://dx.doi.org/10.3390/mi10090571
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author Cui, Jian
Yang, Haibing
Li, Dong
Song, Ziyang
Zhao, Qiancheng
author_facet Cui, Jian
Yang, Haibing
Li, Dong
Song, Ziyang
Zhao, Qiancheng
author_sort Cui, Jian
collection PubMed
description Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias temperature drift of the custom-designed SRA. To solve this issue, this paper presents an SRA embedded in an isolation frame with stress insensitive anchor that prevents the resonant beams suffering from the thermal stress along the sense axis and thus improving the bias stability. Moreover, a high sensitivity device is achieved by integrating the vibrating beams with the comb fingers without conventional additional mass design. The experimental results show that the nominal resonant frequency of the SRA is around 93 kHz with the sensitivity and nonlinearity of 223.7 Hz/g and 5.1‰. The thermal sensitivities of the two resonant beams are −27.6 ppm/°C and −28.8 ppm/°C, respectively, which can be considered as the results owing to temperature change of the Young’s modulus without the thermal stress effect. The bias thermal sensitivity and the stability (1σ) after compensation are tested to be approximately 0.7 mg/°C and 1 mg over the temperature range from −40 °C to 60 °C with ±80 g measurement range.
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spelling pubmed-67806272019-10-30 A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor Cui, Jian Yang, Haibing Li, Dong Song, Ziyang Zhao, Qiancheng Micromachines (Basel) Article Bias thermal sensitivity is a significant performance parameter of a silicon resonant accelerometer (SRA) and is normally used to evaluate the degree of engineering practicability. Theoretical analysis demonstrates that temperature-induced stress is the dominant factor that determines the bias temperature drift of the custom-designed SRA. To solve this issue, this paper presents an SRA embedded in an isolation frame with stress insensitive anchor that prevents the resonant beams suffering from the thermal stress along the sense axis and thus improving the bias stability. Moreover, a high sensitivity device is achieved by integrating the vibrating beams with the comb fingers without conventional additional mass design. The experimental results show that the nominal resonant frequency of the SRA is around 93 kHz with the sensitivity and nonlinearity of 223.7 Hz/g and 5.1‰. The thermal sensitivities of the two resonant beams are −27.6 ppm/°C and −28.8 ppm/°C, respectively, which can be considered as the results owing to temperature change of the Young’s modulus without the thermal stress effect. The bias thermal sensitivity and the stability (1σ) after compensation are tested to be approximately 0.7 mg/°C and 1 mg over the temperature range from −40 °C to 60 °C with ±80 g measurement range. MDPI 2019-08-29 /pmc/articles/PMC6780627/ /pubmed/31470623 http://dx.doi.org/10.3390/mi10090571 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Cui, Jian
Yang, Haibing
Li, Dong
Song, Ziyang
Zhao, Qiancheng
A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title_full A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title_fullStr A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title_full_unstemmed A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title_short A Silicon Resonant Accelerometer Embedded in An Isolation Frame with Stress Relief Anchor
title_sort silicon resonant accelerometer embedded in an isolation frame with stress relief anchor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6780627/
https://www.ncbi.nlm.nih.gov/pubmed/31470623
http://dx.doi.org/10.3390/mi10090571
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