Characteristics of p-Type Conduction in P-Doped MoS(2) by Phosphorous Pentoxide during Chemical Vapor Deposition

We demonstrated p-type conduction in MoS(2) grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS(2) with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A(1g) and E(1)(2g) modes for both the...

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Detalles Bibliográficos
Autores principales: Lee, Jae Sang, Park, Chang-Soo, Kim, Tae Young, Kim, Yoon Sok, Kim, Eun Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781096/
https://www.ncbi.nlm.nih.gov/pubmed/31500287
http://dx.doi.org/10.3390/nano9091278

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6781096/
https://www.ncbi.nlm.nih.gov/pubmed/31500287
http://dx.doi.org/10.3390/nano9091278

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