Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating t...

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Detalles Bibliográficos
Autores principales: Xiao, Xian-Bo, Ye, Qian, Liu, Zheng-Fang, Wu, Qing-Ping, Li, Yuan, Ai, Guo-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6794337/
https://www.ncbi.nlm.nih.gov/pubmed/31617005
http://dx.doi.org/10.1186/s11671-019-3162-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6794337/
https://www.ncbi.nlm.nih.gov/pubmed/31617005
http://dx.doi.org/10.1186/s11671-019-3162-0

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