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Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating t...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6794337/ https://www.ncbi.nlm.nih.gov/pubmed/31617005 http://dx.doi.org/10.1186/s11671-019-3162-0 |