Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl(2)O(4) Quasi‐Quantum Well Structures

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The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well‐shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi‐QW structure of Cr/ultrathin‐Fe/MgAl(2)O(4)(001)/Fe, in which the Cr quasi‐barrier layer confines Δ (1) up‐spin...

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Detalles Bibliográficos
Autores principales: Xiang, Qingyi, Sukegawa, Hiroaki, Belmoubarik, Mohamed, Al‐Mahdawi, Muftah, Scheike, Thomas, Kasai, Shinya, Miura, Yoshio, Mitani, Seiji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6794625/
https://www.ncbi.nlm.nih.gov/pubmed/31637172
http://dx.doi.org/10.1002/advs.201901438

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6794625/
https://www.ncbi.nlm.nih.gov/pubmed/31637172
http://dx.doi.org/10.1002/advs.201901438

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