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Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules

We have studied the influence of different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 75 mm and 100 mm crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out...

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Detalles Bibliográficos
Autores principales: Ellefsen, Oda Marie, Arzig, Matthias, Steiner, Johannes, Wellmann, Peter, Runde, Pål
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803855/
https://www.ncbi.nlm.nih.gov/pubmed/31597332
http://dx.doi.org/10.3390/ma12193272