Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔV(T)) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by dono...

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Detalles Bibliográficos
Autores principales: Choi, Sungju, Kim, Jae-Young, Kang, Hara, Ko, Daehyun, Rhee, Jihyun, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803971/
https://www.ncbi.nlm.nih.gov/pubmed/31561545
http://dx.doi.org/10.3390/ma12193149

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6803971/
https://www.ncbi.nlm.nih.gov/pubmed/31561545
http://dx.doi.org/10.3390/ma12193149

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