Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The observed positive threshold voltage shift (ΔV(T)) was dominated by electron trapping in the gate insulator (GI), whereas it was compensated by donor creation in a-IGZO active regions when both current flows and a high lateral electric field were present. Stress-induced ΔV(T) increased with increasing oxygen content irrespective of the type of stress because oxygen content influenced GI quality, i.e., higher density of GI electron traps, as well as typical direct current (DC) performance like threshold voltage, mobility, and subthreshold swing. It was also found that self-heating became another important mechanism, especially when the vertical electric field and channel current were the same, independent of the oxygen content. The increased ΔV(T) with oxygen content under positive gate bias stress, positive gate and drain bias stress, and target current stress was consistently explained by considering a combination of the density of GI electron traps, electric field relaxation, and self-heating-assisted electron trapping.