Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the effects of lattice and thermal expansion mismatch. Th...

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Detalles Bibliográficos
Autores principales: Masullo, Marco, Bergamaschini, Roberto, Albani, Marco, Kreiliger, Thomas, Mauceri, Marco, Crippa, Danilo, La Via, Francesco, Montalenti, Francesco, von Känel, Hans, Miglio, Leo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6804293/
https://www.ncbi.nlm.nih.gov/pubmed/31581499
http://dx.doi.org/10.3390/ma12193223

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6804293/
https://www.ncbi.nlm.nih.gov/pubmed/31581499
http://dx.doi.org/10.3390/ma12193223

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