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Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach
3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the effects of lattice and thermal expansion mismatch. Th...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6804293/ https://www.ncbi.nlm.nih.gov/pubmed/31581499 http://dx.doi.org/10.3390/ma12193223 |