Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Detalles Bibliográficos
Autores principales: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://www.ncbi.nlm.nih.gov/pubmed/31641871
http://dx.doi.org/10.1186/s11671-019-3160-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://www.ncbi.nlm.nih.gov/pubmed/31641871
http://dx.doi.org/10.1186/s11671-019-3160-2

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