Cargando…

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://www.ncbi.nlm.nih.gov/pubmed/31641871
http://dx.doi.org/10.1186/s11671-019-3160-2
_version_ 1783461488165388288
author Liu, Kangping
Cristini-Robbe, Odile
Elmi, Omar Ibrahim
Wang, Shuang Long
Wei, Bin
Yu, Ingsong
Portier, Xavier
Gourbilleau, Fabrice
Stiévenard, Didier
Xu, Tao
author_facet Liu, Kangping
Cristini-Robbe, Odile
Elmi, Omar Ibrahim
Wang, Shuang Long
Wei, Bin
Yu, Ingsong
Portier, Xavier
Gourbilleau, Fabrice
Stiévenard, Didier
Xu, Tao
author_sort Liu, Kangping
collection PubMed
description Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.
format Online
Article
Text
id pubmed-6805846
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-68058462019-11-05 Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions Liu, Kangping Cristini-Robbe, Odile Elmi, Omar Ibrahim Wang, Shuang Long Wei, Bin Yu, Ingsong Portier, Xavier Gourbilleau, Fabrice Stiévenard, Didier Xu, Tao Nanoscale Res Lett Nano Express Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced. Springer US 2019-10-22 /pmc/articles/PMC6805846/ /pubmed/31641871 http://dx.doi.org/10.1186/s11671-019-3160-2 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Liu, Kangping
Cristini-Robbe, Odile
Elmi, Omar Ibrahim
Wang, Shuang Long
Wei, Bin
Yu, Ingsong
Portier, Xavier
Gourbilleau, Fabrice
Stiévenard, Didier
Xu, Tao
Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title_full Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title_fullStr Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title_full_unstemmed Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title_short Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
title_sort tunneling atomic layer-deposited aluminum oxide: a correlated structural/electrical performance study for the surface passivation of silicon junctions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://www.ncbi.nlm.nih.gov/pubmed/31641871
http://dx.doi.org/10.1186/s11671-019-3160-2
work_keys_str_mv AT liukangping tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT cristinirobbeodile tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT elmiomaribrahim tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT wangshuanglong tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT weibin tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT yuingsong tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT portierxavier tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT gourbilleaufabrice tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT stievenarddidier tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions
AT xutao tunnelingatomiclayerdepositedaluminumoxideacorrelatedstructuralelectricalperformancestudyforthesurfacepassivationofsiliconjunctions