Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for e...

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Detalles Bibliográficos
Autores principales: Khurana, Geetika, Kumar, Nitu, Chhowalla, Manish, Scott, James F., Katiyar, Ram S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6806005/
https://www.ncbi.nlm.nih.gov/pubmed/31641183
http://dx.doi.org/10.1038/s41598-019-51538-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6806005/
https://www.ncbi.nlm.nih.gov/pubmed/31641183
http://dx.doi.org/10.1038/s41598-019-51538-6

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