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Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III...

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Detalles Bibliográficos
Autores principales: Czernecki, Robert, Moszak, Karolina, Olszewski, Wojciech, Grzanka, Ewa, Leszczynski, Mike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829259/
https://www.ncbi.nlm.nih.gov/pubmed/31623121
http://dx.doi.org/10.3390/ma12203375