Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III...

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Autores principales: Czernecki, Robert, Moszak, Karolina, Olszewski, Wojciech, Grzanka, Ewa, Leszczynski, Mike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829259/
https://www.ncbi.nlm.nih.gov/pubmed/31623121
http://dx.doi.org/10.3390/ma12203375
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author Czernecki, Robert
Moszak, Karolina
Olszewski, Wojciech
Grzanka, Ewa
Leszczynski, Mike
author_facet Czernecki, Robert
Moszak, Karolina
Olszewski, Wojciech
Grzanka, Ewa
Leszczynski, Mike
author_sort Czernecki, Robert
collection PubMed
description The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III ratio and growth pressure). Regardless of other growth parameters, increasing the GAP value leads to a reduction in the growth rate.
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spelling pubmed-68292592019-11-18 Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth Czernecki, Robert Moszak, Karolina Olszewski, Wojciech Grzanka, Ewa Leszczynski, Mike Materials (Basel) Article The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III ratio and growth pressure). Regardless of other growth parameters, increasing the GAP value leads to a reduction in the growth rate. MDPI 2019-10-16 /pmc/articles/PMC6829259/ /pubmed/31623121 http://dx.doi.org/10.3390/ma12203375 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Czernecki, Robert
Moszak, Karolina
Olszewski, Wojciech
Grzanka, Ewa
Leszczynski, Mike
Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title_full Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title_fullStr Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title_full_unstemmed Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title_short Influence of Showerhead–Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth
title_sort influence of showerhead–sample distance (gap) in movpe close coupled showerhead reactor on gan growth
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829259/
https://www.ncbi.nlm.nih.gov/pubmed/31623121
http://dx.doi.org/10.3390/ma12203375
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AT grzankaewa influenceofshowerheadsampledistancegapinmovpeclosecoupledshowerheadreactorongangrowth
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