Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems

Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural net...

Descripción completa

Detalles Bibliográficos
Autores principales: Sun, Wookyung, Choi, Sujin, Kim, Bokyung, Park, Junhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829311/
https://www.ncbi.nlm.nih.gov/pubmed/31652510
http://dx.doi.org/10.3390/ma12203451

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829311/
https://www.ncbi.nlm.nih.gov/pubmed/31652510
http://dx.doi.org/10.3390/ma12203451

Ejemplares similares