Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epit...

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Detalles Bibliográficos
Autores principales: Calabretta, Cristiano, Agati, Marta, Zimbone, Massimo, Boninelli, Simona, Castiello, Andrea, Pecora, Alessandro, Fortunato, Guglielmo, Calcagno, Lucia, Torrisi, Lorenzo, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829506/
https://www.ncbi.nlm.nih.gov/pubmed/31618862
http://dx.doi.org/10.3390/ma12203362

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6829506/
https://www.ncbi.nlm.nih.gov/pubmed/31618862
http://dx.doi.org/10.3390/ma12203362

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