Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time

Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i(LP)) measurement has been used to extract depth-resolved L(c) profiles, where L(c) is the minority carrier collection length by diffusion. The extracted L(c) depth-profiles can be used to determine the minority carrier d...

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Detalles Bibliográficos
Autores principales: Jang, Jiseong, Lee, Sangyeob, Chung, Choong-Heui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Engineering
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6831709/
https://www.ncbi.nlm.nih.gov/pubmed/31700962
http://dx.doi.org/10.1016/j.dib.2019.104668
Descripción
Sumario:Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i(LP)) measurement has been used to extract depth-resolved L(c) profiles, where L(c) is the minority carrier collection length by diffusion. The extracted L(c) depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se(2) (CIGS) thin film solar cells (Chung, 2019). During the measurement of i(LP), the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i(LP) values to properly estimate the electrical quality of CIGS thin films.

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