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Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time

Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i(LP)) measurement has been used to extract depth-resolved L(c) profiles, where L(c) is the minority carrier collection length by diffusion. The extracted L(c) depth-profiles can be used to determine the minority carrier d...

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Autores principales: Jang, Jiseong, Lee, Sangyeob, Chung, Choong-Heui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6831709/
https://www.ncbi.nlm.nih.gov/pubmed/31700962
http://dx.doi.org/10.1016/j.dib.2019.104668
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author Jang, Jiseong
Lee, Sangyeob
Chung, Choong-Heui
author_facet Jang, Jiseong
Lee, Sangyeob
Chung, Choong-Heui
author_sort Jang, Jiseong
collection PubMed
description Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i(LP)) measurement has been used to extract depth-resolved L(c) profiles, where L(c) is the minority carrier collection length by diffusion. The extracted L(c) depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se(2) (CIGS) thin film solar cells (Chung, 2019). During the measurement of i(LP), the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i(LP) values to properly estimate the electrical quality of CIGS thin films.
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spelling pubmed-68317092019-11-07 Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time Jang, Jiseong Lee, Sangyeob Chung, Choong-Heui Data Brief Engineering Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i(LP)) measurement has been used to extract depth-resolved L(c) profiles, where L(c) is the minority carrier collection length by diffusion. The extracted L(c) depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se(2) (CIGS) thin film solar cells (Chung, 2019). During the measurement of i(LP), the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i(LP) values to properly estimate the electrical quality of CIGS thin films. Elsevier 2019-10-16 /pmc/articles/PMC6831709/ /pubmed/31700962 http://dx.doi.org/10.1016/j.dib.2019.104668 Text en © 2019 The Author(s) http://creativecommons.org/licenses/by/4.0/ This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Engineering
Jang, Jiseong
Lee, Sangyeob
Chung, Choong-Heui
Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title_full Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title_fullStr Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title_full_unstemmed Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title_short Data on lateral photocurrent along a Cu(In,Ga)Se(2) thin film as a function of air exposure time
title_sort data on lateral photocurrent along a cu(in,ga)se(2) thin film as a function of air exposure time
topic Engineering
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6831709/
https://www.ncbi.nlm.nih.gov/pubmed/31700962
http://dx.doi.org/10.1016/j.dib.2019.104668
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