Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO(x)-Based Memristive Devices

Oxygen ions’ migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT). However, the lack of experimental evidence observ...

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Detalles Bibliográficos
Autores principales: Wang, Dong, Yan, Shaoan, Chen, Qilai, He, Qiming, Xiao, Yongguang, Tang, Minghua, Zheng, Xuejun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6836033/
https://www.ncbi.nlm.nih.gov/pubmed/31546659
http://dx.doi.org/10.3390/nano9101355

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6836033/
https://www.ncbi.nlm.nih.gov/pubmed/31546659
http://dx.doi.org/10.3390/nano9101355

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