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Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast

We demonstrate the implications of very low voltage operation (<1 kV) of a scanning electron microscope for imaging low-dimensional nanostructures where standard voltages (2–5 kV) involve a beam penetration depth comparable to the cross-section of the nanostructures. In this common situation, ima...

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Detalles Bibliográficos
Autores principales: Zarraoa, Laura, González, María U., Paulo, Álvaro San
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6838169/
https://www.ncbi.nlm.nih.gov/pubmed/31700038
http://dx.doi.org/10.1038/s41598-019-52690-9