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Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast
We demonstrate the implications of very low voltage operation (<1 kV) of a scanning electron microscope for imaging low-dimensional nanostructures where standard voltages (2–5 kV) involve a beam penetration depth comparable to the cross-section of the nanostructures. In this common situation, ima...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6838169/ https://www.ncbi.nlm.nih.gov/pubmed/31700038 http://dx.doi.org/10.1038/s41598-019-52690-9 |