Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications

BACKGROUND: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the t...

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Detalles Bibliográficos
Autores principales: Huo, Changhe, Dai, Mingzhi, Hu, Yongbin, Zhang, Xingye, Wang, Weiliang, Zhang, Hengbo, Jiang, Kemin, Wang, Pengjun, Webster, Thomas J, Guo, Liqiang, Zhu, Wenqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Dove 2019
Materias:
Original Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6842275/
https://www.ncbi.nlm.nih.gov/pubmed/31806964
http://dx.doi.org/10.2147/IJN.S208023

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6842275/
https://www.ncbi.nlm.nih.gov/pubmed/31806964
http://dx.doi.org/10.2147/IJN.S208023

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