Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasibility, a crystalline AlN film with a root-mean-squ...

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Detalles Bibliográficos
Autores principales: Mu, Fengwen, Xu, Yang, Shin, Seongbin, Wang, Yinghui, Xu, Hengyu, Shang, Haiping, Sun, Yechao, Yue, Lei, Tsuyuki, Tatsurou, Suga, Tadatomo, Wang, Weibing, Chen, Dapeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843128/
https://www.ncbi.nlm.nih.gov/pubmed/31547592
http://dx.doi.org/10.3390/mi10100635

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843128/
https://www.ncbi.nlm.nih.gov/pubmed/31547592
http://dx.doi.org/10.3390/mi10100635

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