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Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer
The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the het...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843317/ https://www.ncbi.nlm.nih.gov/pubmed/31614868 http://dx.doi.org/10.3390/mi10100694 |