Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD

Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD). We were able to achieve the high phosphorus (CVD gap-fill i...

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Detalles Bibliográficos
Autores principales: Kim, Youngwan, Lee, Myoungwoo, Kim, Youn-Jea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843425/
https://www.ncbi.nlm.nih.gov/pubmed/31614729
http://dx.doi.org/10.3390/mi10100689

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843425/
https://www.ncbi.nlm.nih.gov/pubmed/31614729
http://dx.doi.org/10.3390/mi10100689

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