Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal thr...

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Detalles Bibliográficos
Autores principales: Heredia, Julio, Ribó, Miquel, Pradell, Lluís, Wipf, Selin Tolunay, Göritz, Alexander, Wietstruck, Matthias, Wipf, Christian, Kaynak, Mehmet
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843556/
https://www.ncbi.nlm.nih.gov/pubmed/31546612
http://dx.doi.org/10.3390/mi10100632

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843556/
https://www.ncbi.nlm.nih.gov/pubmed/31546612
http://dx.doi.org/10.3390/mi10100632

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