High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel st...

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Detalles Bibliográficos
Autores principales: Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843697/
https://www.ncbi.nlm.nih.gov/pubmed/31614745
http://dx.doi.org/10.3390/mi10100690

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843697/
https://www.ncbi.nlm.nih.gov/pubmed/31614745
http://dx.doi.org/10.3390/mi10100690

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