Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxi...

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Detalles Bibliográficos
Autores principales: Li, Yongwei, Liang, Ting, Lei, Cheng, Hong, Yingping, Li, Wangwang, Li, Zhiqiang, Ghaffar, Abdul, Li, Qiang, Xiong, Jijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843781/
https://www.ncbi.nlm.nih.gov/pubmed/31547087
http://dx.doi.org/10.3390/mi10100629

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843781/
https://www.ncbi.nlm.nih.gov/pubmed/31547087
http://dx.doi.org/10.3390/mi10100629

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