All WSe(2) 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are pote...

Descripción completa

Detalles Bibliográficos
Autores principales: Sivan, Maheswari, Li, Yida, Veluri, Hasita, Zhao, Yunshan, Tang, Baoshan, Wang, Xinghua, Zamburg, Evgeny, Leong, Jin Feng, Niu, Jessie Xuhua, Chand, Umesh, Thean, Aaron Voon-Yew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6858359/
https://www.ncbi.nlm.nih.gov/pubmed/31729375
http://dx.doi.org/10.1038/s41467-019-13176-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6858359/
https://www.ncbi.nlm.nih.gov/pubmed/31729375
http://dx.doi.org/10.1038/s41467-019-13176-4

Ejemplares similares