All WSe(2) 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are potential candidates. Here, we demonstrate a low-temperature hybrid co-integration of one-transistor-one-resistor memory cell, comprising a surface functionalized 2D WSe(2) p-FET, with a solution-processed WSe(2) Resistive Random Access Memory. The employed plasma oxidation technique results in a low Schottky barrier height of 25 meV with a mobility of 230 cm(2) V(−1) s(−1), leading to a 100x performance enhanced WSe(2) p-FET, while the defective WSe(2) Resistive Random Access Memory exhibits a switching energy of 2.6 pJ per bit. Furthermore, guided by our device-circuit modelling, we propose vertically stacked channel FETs for high-density sub-0.01 μm(2) memory cells, offering a new beyond-Si solution to enable 3-D embedded memories for future computing systems.